4.6 Article

A New Measurement Method for High Voltages Applied to an Ion Trap Generated by an RF Resonator

期刊

SENSORS
卷 21, 期 4, 页码 -

出版社

MDPI
DOI: 10.3390/s21041143

关键词

ion trap; voltage divider; RF voltage; helical resonator

资金

  1. Samsung Research Funding & Incubation Center of Samsung Electronics [SRFC-IT1901-09]
  2. Korea government (MSIT) [2020R1A2C3005689, 2020M3E4A1079867]
  3. National Research Foundation of Korea [2020M3E4A1079867, 2020R1A2C3005689] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

A new method utilizing a pre-calibrated voltage divider to measure the absolute amplitude of large RF voltages in ion traps is proposed, eliminating uncertainty caused by numerical simulations. Experimental validation showed the effectiveness of the method, making it applicable to most ion trap experiments.
A new method is proposed to measure unknown amplitudes of radio frequency (RF) voltages applied to ion traps, using a pre-calibrated voltage divider with RF shielding. In contrast to previous approaches that estimate the applied voltage by comparing the measured secular frequencies with a numerical simulation, we propose using a pre-calibrated voltage divider to determine the absolute amplitude of large RF voltages amplified by a helical resonator. The proposed method does not require measurement of secular frequencies and completely removes uncertainty caused by limitations of numerical simulations. To experimentally demonstrate our method, we first obtained a functional relation between measured secular frequencies and large amplitudes of RF voltages using the calibrated voltage divider. A comparison of measured relations and simulation results without any fitting parameters confirmed the validity of the proposed method. Our method can be applied to most ion trap experiments. In particular, it will be an essential tool for surface ion traps which are extremely vulnerable to unknown large RF voltages and for improving the accuracy of numerical simulations for ion trap experiments.

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