Review of lateral epitaxial overgrowth of buried dielectric structures for electronics and photonics

Integration of embedded dielectric structures with crystalline III-V materials has generated significant interest, due to a host of important applications and material improvements that are central to high performance optoelectronic devices. The core challenge is the production of highquality crystalline layers grown above embedded dielectric materials, requiring the growth processes of both lateral epitaxial overgrowth (LEO) and coalescence. In this review article, we provide a detailed and up-to-date description of the recent advances in both LEO and coalescence in III-V materials, from its extension to molecular beam epitaxial growth and high-quality coalescence in InP and GaAs to emerging applications that utilize encapsulated air voids to enhance optical devices. We also explore the epitaxial integration of other materials, particularly metals, with III-V semiconductors.

Automated summary

The integration of embedded dielectric structures with crystalline III-V materials has attracted significant interest due to its important applications and material improvements in high-performance optoelectronic devices. The core challenge lies in growing high-quality crystalline layers above embedded dielectric materials, requiring processes like lateral epitaxial overgrowth (LEO) and coalescence. This review provides a detailed description of recent advances in LEO and coalescence in III-V materials, from molecular beam epitaxial growth to enhanced optical devices utilizing encapsulated air voids, and explores the epitaxial integration of other materials, particularly metals, with III-V semiconductors.