Analysis of Deep Traps in Mist Chemical Vapor Deposition-Grown n-Type α-Ga2O3 by Photocapacitance Method

Deep traps in n-type alpha-Ga2O3 grown by mist chemical vapor deposition are analyzed by the photocapacitance method and deep-level optical spectroscopy. The trap levels at E-c-(approximate to 2.0 eV) (E-1), E-c-(approximate to 2.5 eV) (E-2), and E-c-(approximate to 3.2 eV) (E-3) are evident and their concentrations are 3.5 x 10(14), 3.6 x 10(14), and 6.2 x 10(15) cm(-3), respectively, which are much lower than ever reported for alpha-Ga2O3. The Frank-Condon shift of all three traps is large as seen for beta-Ga2O3, indicating a high degree of lattice coupling in the midgap state in alpha-Ga2O3.

Automated summary

Deep traps in n-type alpha-Ga2O3 grown by mist chemical vapor deposition are analyzed, revealing trap levels at approximately 2.0 eV, 2.5 eV, and 3.2 eV. The concentrations of these traps are lower than previously reported for alpha-Ga2O3, and a large Frank-Condon shift indicates a high degree of lattice coupling in the midgap state of alpha-Ga2O3.