Goos-Ha•nchen shift at the planar interface of NID dielectric and topological insulator

In the literature there exist two models for topological insulator (TI). Model I assumes TI as a nonreciprocal biisotropic material whereas model II accommodates conducting states in the boundary condition. In this paper using an existing mathematical formulation accommodating both models, Fresnel equations and Goos Ha center dot nchen shift at the interface of NID dielectric-TI are investigated. Furthermore, impact of NID and/or TI on the GHS of the reflected waves have also been studied and compared with the existing cases.

Automated summary

This paper explores the behavior of two models of topological insulator at the interface of NID dielectric-TI, comparing their effects with existing cases.