Influence of Zn2+ on laser induced optical and electrical traits of KH2PO4 crystal for NLO device applications

Pure (KH2PO4, KDP) and zinc (Zn2+) influenced KH2PO4 (Zn-KDP) crystal have been grown by slow evaporation solution technique. The structural details of grown crystals were determined by means of powder X-ray diffraction analysis. The incorporation of Zn2+ in KDP crystal has been qualitatively analyzed by virtue of energy dispersive spectroscopy. The paramount linear optical constant of pure and Zn-KDP crystals have been illustrated using the transmission data from UV-vis spectral analysis recorded within range 200-900 nm. Kurtz-Perry test reveals the enhancement of 1.55 times in SHG efficiency of Zn-KDP crystal with reference to KDP. First ever, third order nonlinear optical (TONLO) parameters of Zn-KDP crystal has been investigated using Z-scan technique. Laser withstanding limit of Zn-KDP crystal has been determined by laser damage threshold (LDT) study. The dielectric response of pure and Zn-KDP crystals has been investigated at different temperatures. Microscopic etching study was employed to evaluate the crystal quality of grown crystal.

Automated summary

Pure KH2PO4 and zinc-doped KH2PO4 crystals were grown using a slow evaporation solution technique, with their structural details and optical properties analyzed through various methods. The study showed that the Zn-KDP crystal exhibited enhanced SHG efficiency and third order nonlinear optical parameters compared to KDP, with its laser damage threshold and dielectric response also investigated.