4.6 Article

Silicon nitride assisted 1x64 optical phased array based on a SOI platform

期刊

OPTICS EXPRESS
卷 29, 期 7, 页码 10509-10517

出版社

Optica Publishing Group
DOI: 10.1364/OE.420921

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资金

  1. National Key Research and Development Program of China [2018YFB2200500]
  2. Shanghai Municipal Science and Technology Major Project [2017SHZDZX03]
  3. Strategic Priority Research Program of Chinese Academy of Sciences [XDB43020500]
  4. National Natural Science Foundation of China [61904185]

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In this study, a 1x64 optical phased array (OPA) based on a silicon on insulator (SOI) platform with integrated silicon nitride was demonstrated. The input port of the OPA was fabricated using a silicon nitride waveguide, and a silicon waveguide with heater was used as the phase shifter. A double layer silicon nitride assisted grating was utilized in the emitter to reduce the emission strength and spot size.
We demonstrate a 1x64 optical phased array (OPA) based on a silicon on insulator (SOI) platform with integrated silicon nitride. The input port of the OPA is fabricated using a silicon nitride waveguide due to its advantage of allowing more optical power. The phase shifter is a silicon waveguide with heater because of the higher thermo-optic coefficient of silicon. And a double layer silicon nitride assisted grating is used in the emitter to reduce the emission strength and then increase the length of emitter to reduce the spot size. The length of the grating emitter is 1.5mm and the measured field of view of this optical phased array is 35.5 degrees x22.7 degrees with spot size of 0.69 degrees x0.075 degrees. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

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