GaSb-based laser diodes grown on MOCVD GaAs-on-Si templates

We report GaSb-based laser diodes (LDs) grown on on-axis (001) Si substrates and emitting at 2.3 mu m. Two series of LDs were studied and compared. For the first series, a GaAs-based buffer layer was first grown by metal organic chemical vapor deposition (MOCVD) before growing the laser heterostructure by molecular-beam epitaxy (MBE). For the second series, a MOCVD GaSb buffer layer was added between the MOCVD GaAs buffer layer and the MBE laser heterostructure. Both series of LDs exhibited threshold currents in the 50-100 mA range and several mW output power at room temperature. They demonstrated continuous wave operation (CW) up to 70 degrees C (set-up limited) without thermal rollover. Broad area LDs exhibited record threshold-current densities in the 250-350 A.cm(-2) range for the second series of LDs, in spite of cracks that appeared during device processing. These results show that the design and fabrication steps of the buffer-layer stacks are critical issues in the epitaxial integration of GaSb-based optoelectronic devices on Si substrates and offer room for much performance improvement. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

The performance of GaSb-based laser diodes grown on different buffer layer designs was compared, highlighting the critical importance of buffer layer stack design and fabrication steps in achieving epitaxial integration of GaSb-based optoelectronic devices on Si substrates.