Solution-processed flexible MAPbI3 photodetectors with ZnO Schottky contacts

With higher detectivity, lower response time, and good mechanical flexibility, perovskite photodetectors are supposed to be a promising alternative as the next generation of photodetectors. In this work, we fabricate a low temperature-processed flexible photodetector with ITO-ZnO Schottky contact via ALD technique which has a lower dark current decreasing from 2.04x10(-8) A/cm(2) to 1.70x10(-9) A/cm(2) under -0.5 V bias voltage actuation. With 530 nm laser irradiation, the flexible device exhibits excellent performance in detectivity of 6.19x10(12) Jones and LDR of 103dB. It also exhibits superior bending stability after 5000 bending circles. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Automated summary

In this work, a low temperature-processed flexible photodetector with ITO-ZnO Schottky contact via ALD technique was fabricated, showcasing lower dark current and excellent performance metrics, including high detectivity and LDR. The device also exhibited outstanding stability after 5000 bending cycles.