Large and controlled Goos-Hanchen shift in monolayer graphene covered multilayer photonic crystals grating

Enhancing and engineering the Goos-Hanchen (GH) shift of two dimensional layered materials provides a powerful way to realize the novel optoelectric devices. Here we report an enhanced and controlled GH shift in the hybrid structure consisting of monolayer graphene and multilayer photonic crystals grating structure by using the rigorous coupled-wave analysis and stationary phase method, whose value can reach up to more than two thousand times of incident wavelength. Such an enhanced GH shift can be ascribed to the excitation of the guide mode resonances in the multilayer photonic crystal grating structure. In addition, the various geometrical parameters of the hybrid structure allow for the control of the GH shift in monolayer graphene based multilayer photonic crystal grating structure. Our work highlights the possibility of improving the performance of the GH shift of monolayer graphene by well designing the structures, which is essential for the optoelectronic sensors and detectors.

Automated summary

By optimizing the structure design, enhanced and controlled Goos-Hanchen shift of monolayer graphene can be achieved, providing a new way to realize novel optoelectric devices.