Monolayer WS2 based electro-absorption modulator

Monolayer WS2 electro-absorption modulator (EAM) on GaN waveguide is investigated. By covering monolayer WS2 on top of the optical waveguide and applying different voltages to change the refractive index of WS2, a strong interaction between monolayer WS2 and light is obtained, which leads to a significant change of the imaginary part of effective mode index (EMI) in the waveguide. A systematic and detailed discussion has been presented to describe and design the EAM. Results show that the EAM can achieve 153 GHz 3-dB modulation bandwidth, around 70% modulation depth and lower insertion loss with 10 mu m-long active region. These will be helpful for the study of two-dimensional material electro-optic modulator.

Automated summary

The study investigates a monolayer WS2 electro-absorption modulator on a GaN waveguide, which achieves a significant change in the effective mode index by altering the refractive index of WS2. The results demonstrate a high modulation bandwidth, modulation depth, and low insertion loss, making it useful for electro-optic modulator research with two-dimensional materials.