Electronic band structure and optical properties of GaAsSb/GaAs for optoelectronic device applications: A 14 band k.p study

The band structure of GaAsSb/GaAs material is calculated along a crystallographic direction using a 14-band model approach. This model captures the reduction of bandgap by 13.5 meV/%Sb and provides a tool for device-level design under a range of wavelength similar to 0.9 ism to 1.3 ism for antimony composition limit 0.1%< Sb<35%, respectively. The analysis extends to calculating the outcome of the antimony composition on electron and hole effective mass. We have found that the electron effective mass (0.057 mo, 35% Sb) decreases by similar to 1.2 compared to GaAs (0.067 mo). Which is responsible for improving the optical gain. So, from the obtained effective mass we determined intrinsic carrier concentration, which seems monotonic with antimony composition. Furthermore, due to uncertainty in VB and CB offset values a lateral variation of 160 nm between type I and type II QWs was observed in the optical gain spectrum. While for use in solar cells, the interband absorption coefficient was also examined as a function of photon energy with a fundamental absorption edge observed at 0.96 eV. The results obtained are well consistent with the literature result previously reported.

Automated summary

The band structure of GaAsSb/GaAs material was calculated using a 14-band model, showing that increasing Sb content results in a reduction of the bandgap and improvement of optical gain. The analysis also determined the effect of antimony composition on electron and hole effective mass, leading to the determination of intrinsic carrier concentration.