Deep levels in ion implanted n-type homoepitaxial GaN: Ion mass, tilt angle and dose dependence

Ion implantation is a fundamental processing step in electronic device manufacturing. However, it can give rise to electrically active defects, in the crystal, that can undermine the functionality of devices. In this study, we carried out an electrical characterization study of defects in ion implanted n-type GaN. We found several levels in the 0.2-1.2 eV below the conduction band edge. The nature of these defects is discussed in the light of the ion mass, tilt angle and dose dependence of the concentration of the detected levels.

Automated summary

In this study, electrical characterization of defects in ion implanted n-type GaN was conducted, revealing several levels in the range of 0.2-1.2 eV below the conduction band edge. The nature of these defects was analyzed in relation to ion mass, tilt angle, and dose dependence of the concentration of the detected levels.