期刊
NANOTECHNOLOGY
卷 32, 期 19, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/abe1ef
关键词
field electron emission; carbon nanotube (CNT); CNT paste-emitter; silicon carbide (SiC) filler; pulverization; interfacial reaction
资金
- Institute of Information & Communications Technology Planning & Evaluation (IITP) - Korea government (MSIT) [2020-0-00009]
- Ministry of Science and ICT
- Ministry of Trade, Industry and Energy, Korea, through the R&D programs of NRF [2015M3A9E2066999, 2017M2A2A6A02070521]
- ETRI - Korea government [20ZB1160]
- Nano-Convergence 2020 [R201602910]
- KEIT [20000935]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20000935] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2015M3A9E2066999, 2017M2A2A6A02070521] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
This study successfully prepared reliable field electron emitters by combining carbon nanotubes with Kovar-alloy substrates, using silicon carbide nano-particle fillers with Ni particles, and enhancing interfacial reactions through the wet pulverization process of SiC aggregates. The optimized paste-emitter exhibited highly reliable field emission performance under high electric fields, demonstrating a strong Si 2p(3/2) signal in the Ni2Si phase to represent the enhanced interfacial reaction of SiC filler onto the metal substrates for vacuum electronic devices.
Adhesion of carbon nanotube (CNT) onto a cathode substrate is very crucial for field electron emitters that are operating under high electric fields. As a supporting precursor of CNT field emitters, we adopted silicon carbide (SiC) nano-particle fillers with Ni particles and then enhanced interfacial reactions onto Kovar-alloy substrates through the optimized wet pulverization process of SiC aggregates for reliable field electron emitters. As-purchased SiC aggregates were efficiently pulverized from 20 to less than 1 micro-meter in a median value (D50). CNT pastes for field emitters were distinctively formulated by a mixing process of the pulverized SiC aggregates and pre-dispersed CNTs. X-ray photoelectron spectroscopy studies showed that the optimally pulverized SiC-CNT paste-emitter had a stronger Si 2p(3/2) signal in the Ni2Si phase than the as-purchased one. The Si 2p(3/2) signal would represent interfacial reaction of the SiC nano-particle onto Ni from the CNT paste and the Kovar substrate, forming the supporting layer for CNT emitters. The optimal paste-emitter even in a vacuum-sealed tube exhibited a highly reliable field emission current with a high current density of 100 mA cm(-2) for over 50 h along with good reproducibility. The enhanced interfacial reaction of SiC filler onto the metal substrates could lead to highly reliable field electron emitters for vacuum electronic devices.
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