4.6 Article

S/Mo ratio and petal size controlled MoS2 nanoflowers with low temperature metal organic chemical vapor deposition and their application in solar cells

期刊

NANOTECHNOLOGY
卷 32, 期 19, 页码 -

出版社

IOP Publishing Ltd
DOI: 10.1088/1361-6528/abe32c

关键词

low-temperature MOCVD; vertically aligned MoS2; MoS2 nanoflower; MoS2; GaAs heterojunction solar cell

资金

  1. Development of core technologies for advanced measuring instruments - Korea Research Institute of Standards and Science [KRISS-2020-GP2020-0009]
  2. AOARD - US government (AFOSR/AOARD) [FA2386-18-1-4104]

向作者/读者索取更多资源

The study introduces a MOCVD method for growing vertically aligned MoS2 nanoflowers with controlled S/Mo ratio, optical properties, and orientation by adjusting the partial pressure ratio of the reaction gases. The method also allows for regulating the flower size and photoluminescence intensity of MoS2 NFs, showing potential for flexible devices integration.
Vertically aligned two-dimensional (2D) molybdenum disulfide nanoflowers (MoS2 NFs) have drawn considerable attention as a novel functional material with potential for next-generation applications owing to their inherently distinctive structure and extraordinary properties. We report a simple metal organic chemical vapor deposition (MOCVD) method that can grow high crystal quality, large-scale and highly homogeneous MoS2 NFs through precisely controlling the partial pressure ratio of H2S reaction gas, P-SR, to Mo(CO)(6) precursor, P-MoP, at a substrate temperature of 250 degrees C. We investigate microscopically and spectroscopically that the S/Mo ratio, optical properties and orientation of the grown MoS2 NFs can be controlled by adjusting the partial pressure ratio, P-SR/P-MoP. It is also shown that the low temperature MOCVD (LT-MOCVD) growth method can regulate the petal size of MoS2 NFs through the growth time, thereby controlling photoluminescence intensity. More importantly, the MoS2 NFs/GaAs heterojunction flexible solar cell exhibiting a power conversion efficiency of similar to 1.3% under air mass 1.5 G illumination demonstrates the utility of the LT-MOCVD method that enables the direct growth of MoS2 NFs on the flexible devices. Our work can pave the way for practical, easy-to-fabricate 2D materials integrated flexible devices in optical and photonic applications.

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