Strong valley splitting in d0 two-dimensional SnO induced by magnetic proximity effect

Strong magnetic interfacial coupling in van der Waals heterostructures is important for designing novel electronic devices. Besides the most studied transition metal dichalcogenides (TMDCs) materials, we demonstrate that the valley splitting can be activated in two-dimensional tetragonal d(0) metal oxide, SnO, via the magnetic proximity effect by EuBrO. In SnO/EuBrO, the valley splitting of SnO can reach similar to 46 meV, which is comparable to many TMDCs and equivalent to an external magnetic field of 800 T. In addition, the valley splitting can be further enhanced by adjusting interlayer distance and applying uniaxial strains. A design principle of new spintronic device based on this unique electronic structure of SnO/EuBrO has been proposed. Our findings indicate that SnO is a promising material for future valleytronics applications.

Automated summary

Research shows that valley splitting can be activated in SnO through the magnetic proximity effect with EuBrO, making SnO a promising material for future valleytronics applications. This unique electronic structure in SnO/EuBrO has the potential to lead to the design of new spintronic devices with enhanced valley splitting.