Dipole-assisted carrier transport in bis(trifluoromethane) sulfonamide-treated O-ReS2 field-effect transistor

We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide (TFSI)-treated O-ReS2 field-effect transistors. Pristine ReS2 was compared with defect-mediated ReS2 to confirm whether the presence of defects on the interface enhances the interaction between O-ReS2 and TFSI molecules. Prior to the experiment, density functional theory (DFT) calculation was performed, and the result indicated that the charge transfer between TFSI and O-ReS2 is more sensitive to external electric fields than that between TFSI and pristine ReS2. After TFSI treatment, the drain current of O-ReS2 FET was significantly increased up to 1,113.4 times except in the range of -0.32-0.76 V owing to Schottky barrier modulation from dipole polarization of TFSI molecules, contrary to a significant degradation in device performance in pristine ReS2 FET. Moreover, in the treated O-ReS2 device, the dipole direction was highly influenced by the voltage sweep direction, generating a significant area of hysteresis in I-V and transfer characteristics, which was further verified by the surface potential result. Furthermore, the dipole state was enhanced according to the wavelength of the light source and photocurrent. These results indicate that TFSI-treated ReS2 FET has large potential for use as next-generation memristor, memory, and photodetector.

Automated summary

In this study, dipole-assisted carrier transport properties of TFSI-treated O-ReS2 field-effect transistors were demonstrated. Results showed that the interaction between TFSI and O-ReS2 was more sensitive to external electric fields compared to pristine ReS2, leading to significantly increased drain current in O-ReS2 FET after treatment. The dipole direction in the treated O-ReS2 device was highly influenced by the voltage sweep direction, resulting in a significant area of hysteresis in I-V and transfer characteristics.