期刊
NANO LETTERS
卷 21, 期 6, 页码 2666-2674出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c00539
关键词
gallium oxide; resistive switching; memristor; electrochemical metallization; nonvolatile memory switching
类别
资金
- Natural Sciences and Engineering Research Council (NSERC) [RGPIN2018-04294]
- Alberta Innovates Technology Futures [AITF iCORE IC50-T1 G2013000198, CTDPG2018000919]
- Canada Research Chairs program [CRC 207142]
- Future Energy Systems of the University of Alberta (CFREF) [T12-P04]
- Western Economic Diversification (WD) [000014328]
- Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) within the International Research Training Group [245845833, IRTG 2022]
- Alberta Technical University of Munich School for Functional Hybrid Materials (ATUMS) within TUM IGSSE
The study demonstrates memristive behavior in Ga/GaOx/SiOx/p(+)-Si junctions, with a reversible insulator-metal transition and high ON/OFF ratio. The presence of a nanoscale gallium oxide layer plays a critical role in achieving reversible resistive switching.
In this work, native GaOx is positioned between bulk gallium and degenerately doped p-type silicon (p(+)-Si) to form Ga/GaOx/SiOx/p(+)-Si junctions. These junctions show memristive behavior, exhibiting large current-voltage hysteresis. When cycled between -2.5 and 2.5 V, an abrupt insulator-metal transition is observed that is reversible when the polarity is reversed. The ON/OFF ratio between the high and low resistive states in these junctions can reach values on the order of 10(8) and retain the ON and OFF resistive states for up to 10(5) s with an endurance exceeding 100 cycles. The presence of a nanoscale layer of gallium oxide is critical to achieving reversible resistive switching by formation and dissolution of the gallium filament across the switching layer.
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