Influence of deposition time on the properties of ZnS/p-Si heterostructures

In the present work, ZnS/p-Si heterostructures have been prepared at different deposition durations using well known chemical bath deposition method. The structural, morphological and optical properties have been thoroughly investigated using x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, UV-visible and photoluminescence spectroscopy. The electrical studies of fabricated structures were carried out by studying the current-voltage (I-V) relation at 300 K. Using the I-V curve, important electrical parameters such as barrier height, saturation current and ideality factor have been calculated. The variation in electrical parameters of fabricated structures as a function of deposition time has been reported.

Automated summary

ZnS/p-Si heterostructures were prepared using chemical bath deposition method with different deposition durations. The structural, morphological, optical properties and electrical parameters of the fabricated structures were thoroughly investigated, showing variations with deposition time.