Structural characteristics of α-Ga2O3 films grown on sapphire by halide vapor phase epitaxy

While the importance of alpha-Ga2O3 crystals is increasingly gaining much interest, the structural behavior of halide vapor phase epitaxy (HVPE) alpha-Ga2O3 crystals in wet chemical etching has not been explored yet. In this study, we investigate the structural characterization of HVPE alpha-Ga2O3 materials via alkali KOH solution etching. Further, the activation energy of the etch rate for the materials, etch pit, and surface roughness after wet chemical treatment have been examined. The cross-sectional TEM analysis demonstrates that the triangular-shaped etch pits with (11 (2) over bar 6) plane are caused by the propagation of threading dislocations in the HVPE alpha-Ga2O3 crystals.

Automated summary

This study investigates the structural characterization of HVPE alpha-Ga2O3 materials via alkali KOH solution etching, revealing triangular-shaped etch pits caused by the propagation of threading dislocations. The activation energy of the etch rate for the materials, etch pit, and surface roughness after wet chemical treatment have been examined, providing insights into the structural behavior of alpha-Ga2O3 crystals during wet chemical etching.