A simple route for synthesis of copper iron tin sulfide thin films

Copper iron tin sulfide Cu2FeSnS4(CFTS) thin films are prepared by a facile and low-cost route using sol-gel spin-coating method without a sulfurization step. The optimal condition for synthesis of CFTS thin films has been determined. X-ray diffraction and Raman spectroscopy analysis revealed that the formation of a pure phase of CFTS thin films at 400 degrees C for 40 min with a large crystallite size 60 nm. The morphological and chemical composition study indicates the formation of uniform, smooth, cracks free and nearly stoichiometric thin films. The films show p-conductivity, good optical and electrical properties; high absorption coefficient >10(4) cm(-1) in visible region, band gap energy of about 1.5 eV, carrier density of 3.85 10(16) cm(-3) and low resistivity of 0.364 Omega.cm. The obtained physical properties of CFTS thin films are suitable for solar cell applications. (C) 2021 Elsevier B.V. All rights reserved.

Automated summary

Copper iron tin sulfide (CFTS) thin films were prepared using a sol-gel spin-coating method without a sulfurization step. The optimal synthesis condition was found to be at 400 degrees Celsius for 40 minutes, resulting in pure phase thin films with good physical properties suitable for solar cell applications.