期刊
MATERIALS LETTERS
卷 284, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.matlet.2020.128912
关键词
Ga2O3; Thin films; Polymer-assisted deposition; Optical materials and properties; Photodetector
资金
- National Natural Science Foundation of China [51672179]
The study focused on beta-Ga2O3 films on sapphire substrates prepared by polymer-assisted deposition (PAD), showing smooth films with single preferential crystal orientation and low defect density. The solar-blind UV photodetector based on these films demonstrated high-performance photoresponse behaviors with lower dark current and faster speeds, suggesting great potential for optical and optoelectronic applications.
We report the study on the structural and photoelectric properties of beta-Ga2O3 films on sapphire substrates prepared by polymer-assisted deposition (PAD). The characterizations reveal that the beta-Ga2O3 films are smooth and composed of crystals with single preferential orientation of (-201). As the low defect density, the solar-blind ultraviolet (UV) photodetector based on the beta-Ga2O3 films shows highperformance photoresponse behaviors with lower dark current and faster speeds. Our results suggest that the beta-Ga2O3 films prepared by low-cost PAD have great potentials for optical and optoelectronic applications. (c) 2020 Published by Elsevier B.V.
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