Chemical stability diagrams as a powerful tool to the synthesis of Cu2SnS3 thin films by chemical bath deposition

Cu2SnS3 films are produced by chemical bath method employing low toxicity citrate precursor taking advantage of the strong complexes formed with Cu(II) and Sn(II). The deposition conditions for Cu2SnS3 thin films were obtained through a thermodynamic analysis of the effect of tin concentration on Cu(II)?Sn(II)-Citrate complexes and Cu(II)?Sn(II)-Citrate-Thiourea system using a species distribution and potential?pH (Eh-pH) analysis. Theoretical analysis of the speciation fraction of Cu(II) and Sn(II) shown that the predominant species at pH equal to 4.5 at 90 ?C are [Cu2(Cit)2OH]3- and [Sn2(Cit)2]2-. For the Cu(II)?Sn(II)-Citrate-Thiourea system at 90 ?C, the Eh-pH diagrams established that binary precursors, Cu2S and SnS2, would be obtained under basic pH conditions. Subsequently, Cu2SnS3 films were synthetized at 90 ?C at pH equal to 8 by keeping fixed the molar relationships complexing agent-metal and sulfur-metal. The redox potentials were measured in solution and chemical equilibrium diagrams were constructed, confirming the existence of binary precursors under reductive conditions. Characterization of structural, electronic and transport properties indicated that Cu2SnS3 fabricated by chemical bath deposition have monoclinic crystal structure, a direct band gap energy of 1.70 eV and p-type conductivity.

Automated summary

Cu2SnS3 films were successfully produced using a chemical bath method with a low toxicity citrate precursor. Thermodynamic and species distribution analysis helped determine the deposition conditions. The analysis also confirmed the existence of binary precursors under reductive conditions.