4.6 Article

Novel cost-effective approach to produce nano-sized contact openings in an aluminum oxide passivation layer up to 30 nm thick for CIGS solar cells

期刊

出版社

IOP Publishing Ltd
DOI: 10.1088/1361-6463/abed09

关键词

solar cells; cupper indium gallium (di)selenide; aluminum oxide; contact openings; surface passivation; alkali salt selenization

资金

  1. European Union's H2020 research and innovation program [715027]
  2. European Research Council (ERC) [715027] Funding Source: European Research Council (ERC)

向作者/读者索取更多资源

A novel method of creating local contact openings in an aluminum oxide passivation layer for ultra-thin CIGS solar cells through selenization of LiF salt is introduced, showing potential cost-effectiveness and environmental friendliness. This method allows for nano-sized openings with homogeneous distribution in thick Al2O3 layers and has potential for improving current collection and external quantum efficiency response in passivated CIGS solar cells. Optimization of the process is needed for wider application in production.
This work presents a novel method of local contact openings formation in an aluminum oxide (Al2O3) rear surface passivation layer by the selenization of the lithium fluoride (LiF) salt on top of the Al2O3 for ultra-thin copper indium gallium (di)selenide (CIGS) solar cells (SCs). This study introduces the potentially cost-effective, fast, industrially viable, and environmentally friendly way to create the nano-sized contact openings with the homogeneous distribution in the thick, i.e. up to 30 nm, Al2O3 passivation layer. The passivation layer is deposited by atomic layer deposition, while the LiF layer is spin-coated. Selenization is done in the H2Se atmosphere and the optimal process parameters are deduced to obtain nano-sized and uniformly allocated openings as confirmed by scanning electron microscopy images. The contact openings were produced in the different thicknesses of the alumina layer from 6 nm to 30 nm. Furthermore, the Al2O3 rear surface passivation layer with the contact openings was implemented into ultra-thin CIGS SC design, and one trial set was produced. We demonstrated that the created openings facilitate the effective current collection through the dielectric Al2O3 layer up to 30 nm thick. However, the upper limit of Al2O3 thickness in which the contact openings can be created by the described method is not established yet. The produced passivated CIGS SCs show increased external quantum efficiency response due to the optical enhancement of the passivated cells. However, the production of SCs on the Al2O3 passivation layer with the openings created by selenization of LiF is not optimized yet.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.6
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据