4.6 Article

Theoretical Characterizations of TADF Materials: Roles of ΔG and the Singlet-Triplet Excited States Interconversion

期刊

JOURNAL OF PHYSICAL CHEMISTRY A
卷 125, 期 7, 页码 1468-1475

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acs.jpca.0c09767

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资金

  1. National Natural Science Foundation of China [21788102]
  2. Ministry of Science and Technology of China through the National Key RD Plan [2017YFA0204501]
  3. Shuimu Tsinghua Scholar Program

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This study investigates the key factors influencing the thermally activated delayed fluorescence (TADF) phenomenon in 11 D-A systems, and finds that the activation energy ΔG is a better molecular descriptor for characterizing TADF performance compared to the energy gap ΔE-ST, providing new insights for the molecular design of high-performance TADF materials.
The thermally activated delayed fluorescence (TADF) phenomenon has attracted increasing attention because it can harvest 100% of the electro-pumped carriers to form singlet bound excited state for fluorescence. It is generally believed that the small energy gap between S-1 and T-1 (Delta E-ST ) is essential for TADF to facilitate the reverse intersystem crossing (rISC). However, for a few donor-acceptor (D-A) organic compounds with small Delta E-ST, the TADF phenomenon is absent, indicating that Delta E-ST might not be a good molecular descriptor. Here, using our self-developed thermal vibration correlation function (TVCF) formalism in combination with quantum chemistry calculations, we revisit the key factors that dominate the TADF property for 11 D-A systems with small Delta E-ST. Based on our theoretical results in comparison to experiments, we conclude that the activation energy Delta G is a good molecular descriptor to characterize the TADF performance because a significantly better linear relationship is observed between Delta G and the rISC rate constant (k(rISC)) compared to that between Delta E-ST and k(rISC). These findings provide deeper understanding of the TADF mechanism, shedding light on the molecular design of high-performance TADF materials.

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