In-situ ion irradiation induced grain growth in nanocrystalline ceria

Irradiation grain growth of CeO2 was studied using in-situ ion irradiation with transmission electron microscopy (TEM). Thin films of ceria were produced by electron beam physical vapor deposition (EBPVD) and then irradiated at the Intermediate Voltage Electron Microscope (IVEM) with 1 MeV Kr2+ ions at temperatures of 400 degrees C, 600 degrees C, and 800 degrees C. During irradiation at the elevated temperatures, the CeO2 phase remained stable and its grains grew with irradiation. Grain growth was only weakly dependent on irradiation temperature between 400 degrees C and 800 degrees C. The grain growth kinetics were evaluated by a thermal spike model that was used to calculate the activation energy for grain growth. (C) 2020 Elsevier B.V. All rights reserved.

Automated summary

Irradiation grain growth of CeO2 was studied using in-situ ion irradiation with TEM. The CeO2 phase remained stable and its grains grew with irradiation at elevated temperatures, showing weak dependence on irradiation temperature between 400°C and 800°C. The grain growth kinetics were evaluated by a thermal spike model to calculate the activation energy for grain growth.