期刊
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS
卷 30, 期 1, 页码 24-31出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JMEMS.2020.3032833
关键词
Deep reactive ion etching (DRIE); high-g acceleration threshold switch; micro-electromechanical system (MEMS); single degree of freedom system (SDOF)
类别
资金
- Terminal Ballistics Research Laboratory, Chandigarh
The paper discusses the design, simulation, and fabrication of a MEMS-based acceleration threshold switch that does not require power to retain its mechanical state. Experimental results were in good agreement with theoretical and simulated results, demonstrating the effectiveness of the unique design.
The paper describes the design, simulation and fabrication of a micro-electromechanical system (MEMS) based acceleration threshold switch with an independent angled latching mechanism. The switch is designed to operate in critical applications wherein power cannot be applied. It is a passive device that does not require power for retention of its mechanical state and mechanical memory. The switch consists of a serpentine spring-mass system with an independent angled latching mechanism and multiple contacts. Stoppers were used to limit displacement in the lateral direction and provide a guided path in the line of action to the proof mass. A transient analysis was performed to study non-linear behaviour of the switch. The latching threshold value was determined analytically based on the geometry of the switch. The switch was fabricated on an SOI (silicon-on-insulator) wafer having 25 mu m thick device layer and 400 mu m handle wafer. The switch was given a static mechanical shock of 3500g to observe its behaviour under shock. Contact resistance of the switch was approximately 2 Omega in the ON position and more than 100 M Omega in OFF position. The theoretical and simulated results were in good agreement with the experimental results.
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