Electrical properties of a metal-germanium-topological insulator (metal/n-Ge/p-Bi2Te3) heterostructure devices

This work presents topological insulator (TI) heterojunction Metal/n-Ge/Bi2Te3, by growing a thin TI film of Bi2Te3 on an n-type Germanium (Ge) substrate. The microstructure and morphology of the developed Bi2Te3 film are analyzed. The electrical behavior of the Metal/n-Ge/Bi2Te3 heterojunction is examined by current-voltage (I-V) and capacitance-voltage ( C-V) measurements. The performance of the heterostructure was examined by depositing different metallic contacts. Metal contacts of aluminum (Al), silver (Ag), and platinum (Pt) were used, and they formed Schottky contact with Ge and an ohmic contact with Bi2Te3. Pt/n-Ge/Bi2Te3 heterostructure was found best in terms of rectification ratio (RR)= 122.7, the figure of merit (FOM) = 49.5, and ideality factor (n) = 7.33 with small series resistance (R-s). The space-charge limited current (SLSC) and ohmic conduction are the transport mechanisms that govern these heterojunctions at a different voltage, affecting its performance. The influence of n-Ge/p-Bi2Te3 junction on the performance of Metal/n-Ge/Bi2Te3 is analyzed. The experimental results are fitted by two- diode simulation and current densityvoltage (J-V) and local ideality factor-voltage n-V plots of these heterojunctions are studied for the recombination current (J(02)). This study is significant in terms of the electrical performance of the Ge-TI-based, heterojunction devices.

Automated summary

The study examines the electrical performance of a Ge-TI-based heterojunction device, focusing on the Metal/n-Ge/Bi2Te3 heterojunction with different metallic contacts. The Pt/n-Ge/Bi2Te3 heterostructure shows the best rectification ratio, figure of merit, ideality factor, and small series resistance among the tested contacts. The transport mechanisms, such as space-charge limited current and ohmic conduction, are found to influence the performance of these heterojunctions at varying voltages.