Effect of Ta doping on the properties of β-Ga2O3 heteroepitaxial films prepared on KTaO3(100) substrates

beta-Ga2O3 single-crystal films with Ta doping concentrations of 0-1.4 at.% were prepared on KTaO3(100) substrates by metal-organic chemical vapor deposition. Herein, we investigated the influence of Ta doping concentration on the structural and electrical properties of the films. X-ray diffraction results showed that the crystalline quality of the films slightly deteriorated with the increase of doping concentration, and the epitaxial relationship was identified as beta-Ga2O3(100)//KTaO3(100) with beta-Ga2O3[001]//KTaO3 < 011 > . The chemical composition and surface morphology of the films were characterized using X-ray photoelectron spectroscopy, and atomic force microscopy, respectively. Hall effect measurement determined that the resistivity and carrier concentration of the films were in the range of 14.8 similar to 5.01 x 10(3) Omega cm and 3.85 x 10(16) similar to 3.97 x 10(18) cm(-3), respectively, whereas the film with 0.2 at.% Ta doping concentration presented the highest Hall mobility of 4.56 cm(2) V-1 s(-1).

Automated summary

Doping of Ta into beta-Ga2O3 single-crystal films affected their structural and electrical properties, with the film doped with 0.2 at.% Ta showing the highest Hall mobility.