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Luise Rost et al.
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V. Valkovskii et al.
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D. S. Abramkin et al.
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S. Gies et al.
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C. Fuchs et al.
ELECTRONICS LETTERS (2016)
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S. Gies et al.
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S. Gies et al.
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C. Berger et al.
AIP ADVANCES (2015)
Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers
Marcin Motyka et al.
NANOSCALE RESEARCH LETTERS (2015)
Effect of arsenic on the optical properties of GaSb-based type II quantum wells with quaternary GaInAsSb layers
F. Janiak et al.
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C. Karcher et al.
PHYSICAL REVIEW B (2010)
Emission wavelength tuning of interband cascade lasers in the 3-4 μm spectral range
A. Bauer et al.
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Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emission
J. Y. T. Huang et al.
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Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment
O. Rubel et al.
PHYSICAL REVIEW B (2006)
Long wavelength emission of InGaAsN/GaAsSb type II W quantum wells
JY Yeh et al.
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Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy
O Rubel et al.
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Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure
AD Andreev et al.
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Correlation of the physical properties and the interface morphology of AlGaAs/GaAs heterostructures
L Gottwaldt et al.
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Optical properties of strained antimonide-based heterostructures
M Dinu et al.
JOURNAL OF APPLIED PHYSICS (2003)
Mesoscopic island structure at GaAs /(AlGa)As interfaces grown by MBE
L Gottwaldt et al.
JOURNAL OF CRYSTAL GROWTH (2003)
Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks
H Kroemer
REVIEWS OF MODERN PHYSICS (2001)