Growth by MOCVD and photoluminescence of semipolar (2021) InN quantum dashes

Semipolar (2021) InN quantum dash growth by metalorganic chemical vapor deposition on GaN was explored as a function of growth time and temperature. Near-infrared photoluminescence was observed at room temperature from the uncapped InN quantum dashes with peak emission wavelengths from 1350 to 1500 nm. After capping with 30 nm of GaN, room temperature photoluminescence remained with an increase in intensity and slight blueshifting of the emission. The photoluminescence was shown to be sensitive to the growth temperature and time of the GaN capping layer.

Automated summary

Semipolar InN quantum dash growth on GaN by metalorganic chemical vapor deposition was studied regarding growth time and temperature. Room temperature photoluminescence was observed with peak emission wavelengths ranging from 1350 to 1500 nm. The emission intensity and wavelength were found to be sensitive to the growth temperature and time of the GaN capping layer.