Growth of (100), (010) and (001) β-Ga2O3 single crystals by vertical Bridgman method

Growth of beta-Ga2O3 single crystals with three growth orientations perpendicular to the (100), (010) and (001) planes was investigated by the vertical Bridgman (VB) method. Three kinds of seed crystals with different orientations were prepared, and crystals with a diameter of 1 in. were obtained under the same growth conditions. Examination by crossed polarizer and X-ray topography shows that the three ingots were twin-free single crystals. For (100), (010) and (001) plane wafers, selective etching using H3PO4 was conducted, then different etching rates due to the anisotropy of beta-Ga2O3 were determined and specifically shaped etch pits were also revealed. Line-shaped defects extending in the [010] direction were observed in the (100), (010) and (001) grown crystals.

Automated summary

The growth of beta-Ga2O3 single crystals with three different growth orientations perpendicular to the (100), (010) and (001) planes was investigated using the vertical Bridgman method. Different etching rates due to the anisotropy of beta-Ga2O3 were observed through selective etching using H3PO4, and line-shaped defects extending in the [010] direction were observed in the grown crystals.