Suppressing the lateral growth during HVPE-GaN crystallization in the c-direction

Different configurations of the growth zone were examined for crystallization of HVPE-GaN. The motivation for this work was to suppress growth in the lateral directions which appears on the seed edges during crystallization in the [0 0 0 1] direction. This phenomenon is a significant problem for growing thick GaN boules. Changes in the configuration involved placing molybdenum elements close to the growing crystal. Such a solution allowed to decrease the area of material deposited at the edges. The reason for this was examined with Computational Fluid Dynamics simulations. Distributions of reagents over the seed and the resulting supersaturation were examined. The value of the latter was lower near the edges of the crystal where the molybdenum elements were placed.

Automated summary

Different configurations of the growth zone were explored for the crystallization of HVPE-GaN in order to suppress lateral growth along the edges. Placing molybdenum elements near the growing crystal proved effective in reducing the area of material deposition at the edges, as confirmed by Computational Fluid Dynamics simulations. This solution was found to result in lower supersaturation values near the crystal edges where the molybdenum elements were placed.