Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy

Temperature management of the substrate is of great importance for molecular beam epitaxy as well as for other thin film deposition techniques. In this work, we compare different in-situ methods for simultaneous measurement of substrate temperature and growth rate for wide band semiconductors such as ZnO and GaN. The different analysis techniques investigated are emissivity-corrected pyrometry as well as band gap thermometry and reflectivity-based growth-rate determination. Combining in-situ and ex-situ measurements with simulation data, we demonstrate characteristic behaviors of common substrate mounting techniques for Al2O3 and ZnO substrates. Moreover, we investigate the performance of reflectometry-based growth rate determination during ZnO homoepitaxy.

Automated summary

Temperature management of substrates is crucial for molecular beam epitaxy and thin film deposition techniques. This work compares different in-situ methods for measuring substrate temperature and growth rate of wide band semiconductors like ZnO and GaN. By combining in-situ and ex-situ measurements with simulation data, characteristic behaviors of common substrate mounting techniques for Al2O3 and ZnO substrates are demonstrated, along with an investigation into the performance of reflectometry-based growth rate determination during ZnO homoepitaxy.