Electron mobility in (100) homoepitaxial layers of phosphorus-doped diamond

The electron transport in n-type diamond is investigated using a series of (100) homoepitaxial layers doped with phosphorus in the range of 10 16-10 18cm - 3. The electrical properties of the n-type layers, such as electron concentration and mobility, were measured using the resistivity and Hall effect as a function of temperature. The scattering of electrons in the diamond was modeled for the (100) orientation, which is preferred for electronic device applications. The physical parameters extracted from the fitting of the experimental data allow us to discuss the upper limit for the electron mobility in (100) n-type diamond.

Automated summary

This study investigates electron transport in n-type diamond using phosphorus-doped (100) homoepitaxial layers in the range of 10^16-10^18 cm^-3. The electrical properties of the n-type layers, including electron concentration and mobility, were measured as a function of temperature. Modeling of electron scattering in diamond for the (100) orientation, which is favored for electronic device applications, was carried out. The physical parameters extracted from experimental data fitting provide insight into the upper limit for electron mobility in (100) n-type diamond.