Thermal management strategies for gallium oxide vertical trench-fin MOSFETs

Trench-fin MOSFETs, with their near-surface heat generation and the higher-surface area afforded by their geometry for thermal management, represent a promising solution to the thermal problems frequently encountered in lateral beta -Ga2O3 devices. Here, we investigate potential thermal-management strategies for a vertical beta -Ga2O3 trench-fin MOSFET through parametric analysis, offering recommendations on how best to design a device for maximal current density and excellent thermal performance. Primarily, by using a thermally conductive dielectric over the MOSFET structure, significant improvements to device power density may be achieved, aided by thermal spreading. Additionally, we find that by bonding thermal spreaders to its topside can yield significant improvements in thermal performance.

Automated summary

By using a thermally conductive dielectric over the MOSFET structure and bonding thermal spreaders to its topside, significant improvements in device power density and thermal performance can be achieved.