Optimization of adsorption and reaction time of SILAR deposited Cu2ZnSnS4 thin films: Structural, optical and electrochemical performance

Nano-crystalline quaternary Cu2ZnSnS4 (CZTS) thin films have been deposited over the conducting and nonconducting substrates by SILAR method with different dipping times. A variety of techniques were employed for the characterization of structural, vibrational, optical, morphological with compositions, and electrochemical properties of the annealed films. The XRD patterns confirmed the formation mingled phase of wurtzite and kesterite structures. The FTIR spectra established the metal vibrations of CZTS films. Microscopically analyses have been revealed the morphology of the annealed films as homogeneous and uniformly distribution agglomerated spherical shaped particles. The optical spectra show the maximum optical absorption in the visible region. The band gap has been calculated using Tauc's relation and obtained bandgap is in the range of 1.46-1.82 eV. Electrochemical performance of Cu2ZnSnS4 films has been tested by cyclic voltagrams (CV), Galvanostatic charge-discharge (GCD) and Electrochemical impedance spectroscopy (EIS) analysis. Particularly current run with 1000 cycles, retentivity of the working electrode is 99.69% at Cu2ZnSnS4-52 film. (C) 2020 Elsevier B.V. All rights reserved.

Automated summary

Nano-crystalline quaternary Cu2ZnSnS4 (CZTS) thin films were deposited on conducting and nonconducting substrates using the SILAR method with varying dipping times. The films were characterized structurally, vibrationally, optically, morphologically, compositionally, and electrochemically. The films exhibited a mingled phase of wurtzite and kesterite structures, with good optical absorption and a wide range of bandgap values.