相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。High-Fluence Proton-Induced Degradation on AlGaN/GaN High-Electron-Mobility Transistors
Shaozhong Yue et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2020)
Investigations on electrical parameters degradation and recovery of E-mode GaN high-electron mobility transistors under repetitive unclamped inductive switching stresses based on low-frequency noise
X. B. Xu et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)
Low surface damage during ohmic contact formation in AlGaN/GaN HEMT by selective laser annealing
Mingchen Hou et al.
ELECTRONICS LETTERS (2019)
Evidence of GaN HEMT Schottky Gate Degradation After Gamma Irradiation
Xiang Zheng et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Influence of Poly-AlN Passivation on the Performance Improvement of 3-MeV Proton-Irradiated AlGaN/GaN MIS-HEMTs
Dongliang Zhang et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2019)
Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning
J. He et al.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY (2019)
Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs
Rong Jiang et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2018)
Effect of Hydrogen on Defects of AlGaN/GaN HEMTs Characterized by Low-Frequency Noise
Y. Q. Chen et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2018)
Proton Irradiation Effects on AlGaN/GaN HEMTs With Different Isolation Methods
Dong-Seok Kim et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2018)
Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs
Rong Jiang et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2017)
1/f Noise in As-Processed and Proton-Irradiated AlGaN/GaN HEMTs Due to Carrier Number Fluctuations
Pan Wang et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2017)
Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs
Jin Chen et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2015)
Device Modeling for Understanding AlGaN/GaN HEMT Gate-Lag
Narayanan Ramanan et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2014)
Impact of proton irradiation on deep level states in n-GaN
Z. Zhang et al.
APPLIED PHYSICS LETTERS (2013)
Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors
C. Schwarz et al.
APPLIED PHYSICS LETTERS (2013)
Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements
Marco Silvestri et al.
APPLIED PHYSICS LETTERS (2013)
Proton-Induced Dehydrogenation of Defects in AlGaN/GaN HEMTs
Jin Chen et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2013)
Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors
B. D. Weaver et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2012)
Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence
F. Berthet et al.
MICROELECTRONICS RELIABILITY (2012)
Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors
T. Roy et al.
APPLIED PHYSICS LETTERS (2011)
Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors
Y. S. Puzyrev et al.
JOURNAL OF APPLIED PHYSICS (2011)
Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise
E. G. Ioannidis et al.
JOURNAL OF APPLIED PHYSICS (2010)
SRIM - The stopping and range of ions in matter (2010)
James F. Ziegler et al.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS (2010)
An analysis of the effects of low-energy electron irradiation of AlGaN/GaN HFETs
John W. McClory et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2007)
Low-frequency noise in silicon-on-insulator devices and technologies
E. Simoen et al.
SOLID-STATE ELECTRONICS (2007)
Proton and heavy ion irradiation effects on AlGaN/GaN HFET devices
G. Sonia et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2006)
A model for hydrogen-induced piezoelectric effect in InPHEMTs and GaAsPHEMTs
SD Mertens et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2002)
Hydrogen passivation of deep levels in n-GaN
A Hierro et al.
APPLIED PHYSICS LETTERS (2000)
分享论文
