期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 68, 期 2, 页码 804-810出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3043219
关键词
Impedance; Passband; Dispersion; Electromagnetics; Electromagnetic scattering; Electron beams; Traveling wave tubes; Sheet beam; slow wave structure (SWS); terahertz (THz); traveling wave tube (TWT)
资金
- National Natural Science Foundation of China [62071087, 61921002]
The novel sine groove waveguide slow wave structure (SGW-SWS) proposed for wideband terahertz (THz) traveling wave tube (TWT) shows high interaction impedance, wide beam tunnel, and can be fabricated using Nano-Computer Numerical Control (CNC) milling techniques. Compared to the sine waveguide slow wave structure (SW-SWS), SGW-SWS has a wider passband and higher average interaction impedance throughout the passband. The beam tunnel size of SGW-SWS is independent of dispersion characteristics, allowing for further increase in beam current.
A novel sine groove waveguide slow wave structure (SGW-SWS), originated from the sine waveguide (SW), is proposed for a wideband terahertz (THz) traveling wave tube (TWT). SGW-SWS not only has high interaction impedance in a relatively wide frequency band, but also has a wide beam tunnel. In addition, it can be fabricated using the Nano-Computer Numerical Control (CNC) milling techniques. The high-frequency simulation results show that, under the same dispersion, the passband of SGW-SWS is 23 GHz wider than that of SW-SWS, and the average interaction impedance of SGW-SWS is higher than that of SW-SWS in the whole passband. And the transverse dimension of beam tunnel is independent of the dispersion characteristics of SGW-SWS, so the beam current can be further increased by enlarging the size of beam tunnel. Moreover, the particle-in-cell (PIC) simulation results reveal that the saturated power and electronic efficiency of SGW-TWT in the frequency range of 201-260 GHz are more than 84.9 W and 2.72%, respectively, when the operating voltage is 20.8 kV and the beam current is 150 mA.
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