期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 68, 期 3, 页码 1121-1128出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3048326
关键词
Photovoltaic cells; Photonic band gap; Heterojunctions; Mathematical model; Radiative recombination; Photovoltaic systems; Doping; CdS; CuSbS₂ photovoltaic solar cell; Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D); ZnO
Research on CuSbS2-based ternary compound semiconductor as an absorber layer for photovoltaic cells shows promising potential due to its high absorption coefficient and low cost. Optimization of parameters such as thickness, bandgap, and carrier concentration can improve the overall performance of solar devices.
Research on photovoltaic solar cells has always been exciting due to its clean and green nature. However, the quest for alternative approaches to the design of highly efficient solar cells with optimal cost-efficiency ratios has also been progressing. CuSbS2-based ternary compound semiconductor is a promising candidate for the ultrathin film photovoltaic cell due to the high absorption coefficient, low cost, and earth abundant which makes it suitable to use as a thin-film absorber layer. The impact of various parameters such as thickness, bandgap, band alignment, temperature, carrier concentration, and bandgap grading has been studied to optimize the overall performance of the solar device. In present work, we have adopted the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) simulation approach to the design of CuSbS2 absorber-based solar heterostructure cells to boost the electrical properties of the solar cell.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据