4.5 Article

Flux Controlled Floating Memristor Employing VDTA: Incremental or Decremental Operation

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IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TCAD.2020.2999919

关键词

Memristors; Transconductance; Integrated circuit modeling; Hysteresis; Semiconductor device modeling; Neuromorphics; Mathematical model; Incremental; decremental operation; memristor; neuromorphic circuit; non volatile nature; pinched hysteresis loop; voltage difference transconductance amplifier (VDTA)

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This research introduces a floating memristor model using VDTA and passive components, demonstrating both incremental and decremental modes of operation. The performance of the memristor is analyzed through simulation and experiment, with application perspectives including Pavlovian associative learning experiments.
This research article offers a floating memristor model using single voltage difference transconductance amplifier (VDTA) and grounded passive components. The proper utilization of VDTA port characteristics with passive components exhibits both incremental and decremental modes of operation without multiplier circuit. The performance analysis of proposed memristor is verified by using post layout Cadence Virtuoso simulation to examine the characteristics of all possible temperature and process Corners. In addition, experimental verification of VDTA-based memristor is done using commercially available operational transconductance amplifier (OTA) as IC CA3080. The results obtained through simulation and experiment follows the theoretical aspects. Moreover, an application perspective of the proposed design includes a brief neuromorphic circuit implementation for Pavlovian associative learning experiment.

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