期刊
IEEE JOURNAL OF SOLID-STATE CIRCUITS
卷 56, 期 2, 页码 511-520出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSSC.2020.3015527
关键词
Digitally assisted analog low-dropout (DA-ALDO) regulator; hybrid; load regulation; transient speed
资金
- Research Grant Council of Hong Kong SAR Government, China [16210517]
This article introduces a digitally assisted analog low-dropout (DA-ALDO) regulator, which achieves tight regulation, wide load current range, area-efficient power transistor utilization, and fast transient speed. The regulator utilizes an analog control scheme in steady state and invokes a digital control scheme only during transient events for speed enhancement, quiescent current reduction, and switching noise suppression. The DA-ALDO is fabricated in a 65-nm CMOS process, achieving 30-muV/mA load regulation with a 120-muA quiescent current, and demonstrating undershoot/overshoot and settling time with a 450-mA/100-ns load current step.
This article proposes a digitally assisted analog low-dropout (DA-ALDO) regulator, a hybrid solution which realizes tight regulation, wide load current range, area-efficient power transistor utilization, and fast transient speed in the meantime. The DA-ALDO employs an analog control scheme in steady state. Consequently, an accurate output voltage is available with a high-gain amplifier and no limit cycle oscillation occurs. A digital control scheme is invoked only upon transient events for speed enhancement, quiescent current reduction, and switching noise suppression. The digital controller adopts a hybrid algorithm of binary and multiple-unary schemes for an optimized tradeoff between voltage accuracy and settling time. The proposed DA-ALDO is fabricated in a 65-nm CMOS process with a maximum load current of 500 mA and a 250 pF on-chip output capacitor. Operating with an input of 1.2 V and outputs of 0.6-1.0 V and delivering from 500 mu A to 500 mA (or a 463x load current range with a current efficiency eta(c) > 90%), the DA-ALDO achieves 30-mu V/mA load regulation while consuming 120-mu A quiescent current. The measured undershoot/overshoot and the corresponding settling time with a 450-mA/100-ns load current step are 55 mV and 174 ns and 56 mV and 220 ns, respectively. The figure of merit (FoM) is as low as 0.0073 ps.
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