High-Performance Oxide TFTs With Co-Sputtered Indium Tin Oxide and Indium-Gallium-Zinc Oxide at Source and Drain Contacts

Amorphous indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) have shown significant potential for application in transparentandflexible electronicdevices. However, the sourceand drain (S/D) electrodesof IGZOTFTs with indium tin oxide (ITO) thin films can cause Schottkylike behavior in the output characteristics owing to the formation of a potential barrier between the IGZO and ITO thin films. In this study, we designed and fabricated TFTs by applying a novel ITO S/D electrode layer (375 nm) with co- sputtered IGZO and ITO thin films (125 nm) deposited at room temperature. The proposed TFT exhibits superior electric characteristics (mu(sat) = 35.4 cm(2)/Vs) compared to those of TFTs with conventional ITO electrodes (mu sat = 9.1 cm(2)/Vs) owing to its lower contact and channel resistance and the generation of a surface reaction between S/D and channel layers, creating additional oxygen vacancies at the IGZO channel region. The proposed S/D electrode could be fabricatedon a glass substrate at lowtemperatures (below 200 degrees C). The excellent electrical properties of the proposed IGZO TFT are expected to promote the application of TFTs in advanced displays.

Automated summary

Amorphous indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) have shown significant potential for application in transparent and flexible electronic devices. A novel TFT design with ITO S/D electrode layer and co-sputtered IGZO and ITO thin films has demonstrated superior electric characteristics compared to conventional ITO electrodes, due to lower contact and channel resistance and additional oxygen vacancies at the IGZO channel region. The proposed IGZO TFT with excellent electrical properties is expected to promote the application of TFTs in advanced displays.