4.6 Article

High-Detectivity β-Ga2O3 Microflake Solar-Blind Phototransistor for Weak Light Detection

期刊

IEEE ELECTRON DEVICE LETTERS
卷 42, 期 3, 页码 383-386

出版社

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2021.3050107

关键词

beta-Ga2O3; photodetector; solar blind; record detectivity; weak light detection

资金

  1. NSFC [61925110, U20A20207, 61821091, 62004184, 62004186, 51932004, 51961145110]
  2. Ministry of Science and Technology (MOST) of China [2016YFA0201803, 2018YFB0406504]
  3. Strategic Priority Research Program of the Chinese Academy of Sciences (CAS) [XDB44000000]
  4. Key Research Program of Frontier Sciences of Chinese Academy of Sciences [QYZDB-SSW-JSC048]
  5. Key-Area Research and Development Program of Guangdong Province [2020B010174002]
  6. Fundamental Research Funds for the Central Universities [WK2100000014, WK2100000010]
  7. China Postdoctoral Science Foundation [2020M671895, BX20200320]
  8. Opening Project of the Key Laboratory of Microelectronics Devices and Integration Technology in Institute of Microelectronics of CAS
  9. Key Laboratory of Nanodevices and Applications in Suzhou Institute of Nano-Tech and Nano-Bionics of CAS

向作者/读者索取更多资源

This letter presents a high-performance solar-blind phototransistor based on N-2-annealed beta-Ga2O3 microflake for weak light detection. The device exhibits ultra-low dark current, high external quantum efficiency, and narrow-band response, achieving ultra-high responsivity and record-high detectivity under specific illumination conditions. The device demonstrates superior weak-light-detection performance for solar-blind photodetection applications.
This letter reports a high-performance solar-blind phototransistor based on N-2-annealed beta-Ga2O3 microflake for weak light detection. The phototransistor exhibits an ultra-low dark current of 27 fA, a high external quantum efficiency of 8.36 x 10(7) %, a photo-to-dark-current ratio of 1.08 x 10(7), a low power consumption of 2.92 pW, and a narrow-band response with a cut off wavelength of 263 nm. In addition, the spectral selectivity can be well modulated by the gate bias and reaches a maximum R-240/R-400 ratio of 2.4 x 10(4). Especially, an ultra-high responsivity (R) of 1.71 x 10(5) A/W and a record-high detectivity (D*) of 1.19 x 10(18) Jones have been achieved under 254nm illumination of 4.1 mu W/cm(2). The superior weak-light-detection performance of the device makes it one of the best Ga2O3 detectors towards solar-blind photodetection application.

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