Negative Capacitance MgZnO-Channel Thin-Film Transistor With Ferroelectric NiMgZnO in the Gate Stack

We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg0.03Zn0.97O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni0.02Mg0.15Zn0.83O (NMZO) serves as the ferroelectric layer in the NMZO/SiO2 stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current I-D reaches 10(9).

Automated summary

A negative capacitance thin-film transistor (NC-TFT) was fabricated on a glass substrate using MgZnO, with a Mg0.03Zn0.97O semiconductor layer as the channel and Ni0.02Mg0.15Zn0.83O as the ferroelectric layer. The NC-TFT showed significantly reduced subthreshold swing and a high on/off ratio of drain current.