4.4 Article

Effects of Se Doping on Thermoelectric Properties of Tetrahedrite Cu12Sb4S13-zSez

期刊

ELECTRONIC MATERIALS LETTERS
卷 17, 期 2, 页码 164-171

出版社

KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-021-00270-3

关键词

Thermoelectric; Tetrahedrite; Mechanical alloying; Hot pressing

资金

  1. Basic Science Research Capacity Enhancement Project (National Research Facilities and Equipment Center) through the Korea Basic Science Institute - Ministry of Education [2019R1A6C1010047]

向作者/读者索取更多资源

Tetrahedrite Cu12Sb4S13, composed of non-toxic components, shows low thermal conductivity at intermediate temperatures and has potential as a thermoelectric material. Doping with Se can optimize carrier concentration and enhance power factor, while reducing thermal conductivity through additional phonon scattering. Increasing Se substitution leads to decreased carrier concentration, increased mobility, lower electrical conductivity, higher Seebeck coefficient, and reduced thermal conductivity in Se-doped tetrahedrites.
Tetrahedrite Cu12Sb4S13 is composed of abundant non-toxic components and has attracted attention as a promising thermoelectric material with low thermal conductivity at intermediate temperatures. The carrier concentration can be optimized by doping (substituting), thereby maximizing its power factor and reducing its thermal conductivity. In this study, Cu12Sb4S13-zSez (z = 0.1-0.4) compounds were synthesized using mechanical alloying and hot pressing. Our objective was to maintain a high power factor through Se doping and to reduce the lattice thermal conductivity through additional phonon scattering. X-ray diffraction analysis revealed that the lattice constant increased with an increase in Se substitution for the S sites, and all the specimens appeared as a single tetrahedrite phase. As the Se doping level increased, the carrier (hole) concentration decreased while the mobility increased. The Hall and Seebeck coefficients were both positive, indicating that Se-doped tetrahedrites exhibit p-type conduction. As the Se substitution increased, the electrical conductivity decreased, but the Seebeck coefficient increased. In addition, Se doping lowered both, the electronic and lattice thermal conductivities, which resulted in decreased thermal conductivity. A maximum dimensionless figure of merit (ZT) of 0.87 was obtained at 723 K for Cu12Sb4S12.8Se0.2 with a high power factor of 0.96 mW m(-1) K-2 and a low thermal conductivity of 0.77 W m(-1) K-1. [GRAPHIC].

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据