4.7 Article

Dielectric and electrical properties of La@NiO SNPs for high-performance optoelectronic applications

期刊

CERAMICS INTERNATIONAL
卷 47, 期 11, 页码 15611-15621

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.ceramint.2021.02.131

关键词

La@NiO NPs; Flash-combustion synthesis; Optical properties; Dielectric and electrical properties

资金

  1. King Khalid University, Abha, Saudi Arabia [R.G.P.2/60/42]
  2. King Saud University, Riyadh [RG-1435-002]

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An achievement of successful synthesis of nanoscale La@NiO spherical nanoparticles with remarkable improvement in dielectric and electrical properties due to lanthanum doping was reported. Properties such as capacitance, impedance, dielectric constant, dielectric loss, and electrical conductivity were significantly enhanced, showing potential for optoelectronic applications.
A successful flash combustion synthesis of NiO spherical nanoparticles with various contents of lanthanum (La) doping (La@NiO SNPs) with remarkably enhanced dielectric and electrical properties are reported. Single phase has been confirmed through X-ray diffraction and FT-Raman spectroscopic analysis. Increasing La content in NiO reduced the crystallite size by 341% to 6.65 nm from 22.70 nm. The composition of elements in the final product was assessed via EDX analysis. Moreover, monophasic La@NiO SNPs synthesis with size reduction was observed using field emission scanning electron microscopy (FESEM). A red shift in optical energy gaps (3.52?3.26 eV) was observed with increasing La contents from pure to 10 wt%. Capacitance (109?964 PF), impedance (9.41 ? 104?1.67 ? 104 k?), dielectric constant (100?967), dielectric loss (335?10666), and electrical conductivity (4?5 S/m) values were remarkably improved with La doping. The current (I)?voltage (V) characteristics of pure and La@NiO NPs were performed under the biased voltage of ?20 V. Current was noticed in the range of (3.81 ? 10- 4?9.91 ? 10-3 amp) at pure, 1.0, 3.0, 5.0, and 10 wt% of La@NiO NPs. Enhancements in the dielectric and electrical properties of as-synthesized NPs make them suitable for optoelectronics uses.

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