期刊
ELECTRONICS LETTERS
卷 52, 期 12, 页码 1045-1046出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2016.0490
关键词
gallium compounds; III-V semiconductors; wide band gap semiconductors; light emitting diodes; optical fabrication; surface treatment; wetting; etching; radiation hardening (electronics); electrical property; optical property; laser irradiation treatment; vertical light-emitting diode; VLED; surface treatment scheme; microsized protrusion; krypton fluoride laser irradiation; energy density; potassium hydroxide wet etching; current 350 mA; GaN
资金
- European Union [619194]
An analogue-digital circuit for thermal control of the resonance frequency of optical ring resonators is suggested. This approach is characterised by a low power dissipation of 209 mu W and needs only 2800 mu m(2) of chip area in 0.16 mu m CMOS technology. Therefore, it is well appropriate to be used to control each of the cells of large optical switch matrices. Compared with a purely analogue heater control approach the power dissipation is reduced to 7%.
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