4.7 Article

Synthesis of atomically thin alloyed molybdenum-tungsten disulfides thin films as hole transport layers in organic light-emitting diodes

期刊

APPLIED SURFACE SCIENCE
卷 541, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2020.148529

关键词

Organic light-emitting diodes; Molybdenum disulfide; Tungsten disulfide; Hole transport layer; Charge transport layer

资金

  1. National Research Foundation of Korea (NRF) - Korean government [2018R1A4A1022647, 2020R1A2C2100670]
  2. Creative Materials Discovery Program [NRF-2017M3D1A1039379]
  3. Korea University
  4. Overseas Postdoctoral Fellowship of Foresting Next-Generation Research Program through the National Research Foundation of South Korea [2020R1A6A3A03038570]
  5. National Research Foundation of Korea [2020R1A2C2100670, 2020R1A6A3A03038570] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This study presents a simple method for synthesizing alloyed transition metal disulfides (TMD) thin films and their application as hole transport layers in OLEDs. The physical and chemical properties of the alloyed TMD layers can be controlled by varying precursor concentrations. The device performance of OLEDs based on alloyed TMD layers is comparable to conventional PEDOT:PSS, and device stability in air is significantly improved.
Two-dimensional transition metal dichalcogenides (TMDs) have been intensively researched due to their excellent physical, chemical, and mechanical properties, which make them essential for various electronic devices owing to several disadvantages of conventional hole-transport layers (HTLs) such as hygroscopic effect and highly acidic nature, which can induce low stability of the fabricated devices. Especially, they have been considered as hole-transport layers (HTLs) in organic light-emitting diodes (OLEDs) and organic photovoltaics due to its chemical stability. Despite of its adequate work-function value and chemical stability, the device stability could be enhanced but, device performance of pristine TMD-HTL-based has been reported lower than conventional devices. In this work, we report a facile route to synthesize alloyed transition metal disulfides (TMD) thin films and their application as hole transport layers in OLEDs. Polycrystalline, large-area, and uniform Mo1-xWxS2 thin films are synthesized via simple thermal disproportionation methods by chemical vapour deposition. The physical and chemical properties of the synthesized alloyed TMD layers are controlled by varying the precursor concentrations. The device performance of alloyed TMD-layer-based OLED is comparable to that of conventional poly(3,4-ethylenedioxythiophene):poly-(styrenesulfonate) (PEDOT:PSS) and device stability in air is significantly improved. Thus, a novel approach to synthesize alloyed Mo1-xWxS2 thin films and their application in optoelectronic devices are presented herein.

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