4.7 Article

Magnesium-intercalated graphene on SiC: Highly n-doped air-stable bilayer graphene at extreme displacement fields

期刊

APPLIED SURFACE SCIENCE
卷 541, 期 -, 页码 -

出版社

ELSEVIER
DOI: 10.1016/j.apsusc.2020.148612

关键词

Graphene; Extremely high displacement field; Electronic structure; ARPES; Air exposure

资金

  1. Australian Research Council [DP150103837, DP200101345, FL120100038, CE17010039]
  2. Australian Government Research Training Program
  3. Monash Centre for Atomically Thin Materials
  4. Monash University Summer Vacation Research Scholarship Program
  5. Monash University Summer ResearchFirst Scholarships Program
  6. core programs at the U.S. Naval Research Laboratory - Office of Naval Research
  7. Australian Research Council [DP200101345, FL120100038] Funding Source: Australian Research Council

向作者/读者索取更多资源

The electronic structure of bilayer graphene was investigated using angle-resolved photoemission spectroscopy under high n-doping and extreme displacement fields. Intercalation of magnesium transformed the single massless Dirac band of monolayer graphene into the characteristic massive double-band Dirac spectrum of quasi-freestanding bilayer graphene. This resulted in an n-type doping of 2.1 x 10(14) cm(-2) and an extremely high displacement field of 2.6 V/nm, creating a significant gap of 0.36 eV at the Dirac point.
We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-doping and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesium intercalation, the single massless Dirac band of epitaxial monolayer graphene is transformed into the characteristic massive double-band Dirac spectrum of quasi-freestanding bilayer graphene. Analysis of the spectrum using a simple tight binding model indicates that magnesium intercalation results in an n-type doping of 2.1 x 10(14) cm(-2) and creates an extremely high displacement field of 2.6 V/nm, thus opening a considerable gap of 0.36 eV at the Dirac point. This is further confirmed by density-functional theory calculations for quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide, which show a similar doping level, displacement field and bandgap. Finally, magnesium-intercalated samples are surprisingly robust to ambient conditions; no significant changes in the electronic structure are observed after 30 min exposure to air.

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