High carrier mobility epitaxially aligned PtSe2 films grown by one-zone selenization

Few-layer PtSe2 films are promising candidates for applications in high-speed electronics, spintronics and photodetectors. Reproducible fabrication of large-area highly crystalline films is, however, still a challenge. Here, we report the fabrication of epitaxially aligned PtSe2 films using one-zone selenization of pre-sputtered platinum layers. We have studied the influence of growth conditions on structural and electrical properties of the films prepared from Pt layers with different initial thickness. The best results were obtained for the PtSe2 layers grown at elevated temperatures (600 degrees C). The films exhibit signatures for a long-range in-plane ordering resembling an epitaxial growth. The charge carrier mobility determined by Hall-effect measurements is up to 24 cm(2)/V.s.

Automated summary

Few-layer PtSe2 films are promising candidates for high-speed electronics, spintronics, and photodetectors. The study found that growth temperature significantly influences the structural and electrical properties of the films. The best results were achieved for PtSe2 layers grown at 600 degrees Celsius, exhibiting long-range in-plane ordering.